unisonic technologies co., ltd utt60n06 power mosfet www.unisonic.com.tw 1 of 8 copyright ? 2011 unisonic technologies co., ltd qw-r502-575.a n-channel enhancement mode power mosfet ? description the utc utt60n06 is n-channel enhancement mode power field effect transistors with stabl e off-state characteristics, fast switching speed and low thermal resistance. usually used at telecom and computer applications. ? features * r ds(on) = 18m ? @ v gs = 10 v * fast switching capability * avalanche energy specified ? symbol 1.gate 3.source 2.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UTT60N06L-TN3-R utt60n06g-tn3-r to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source
utt60n06 power mosfet unisonic technologies co., ltd 2 of 8 www.unisonic.com.tw qw-r502-575.a ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gs 20 v t c = 25c 60 a continuous drain current t c = 100c i d 39 a drain current pulsed (note 2) i dm 120 a avalanche energy single pulsed e as 100 mj power dissipation (t c =25c) p d 83 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note:1. absolute maxi mum ratings are those values beyond whic h the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repeativity rating: pulse widt h limited by junction temperature ? thermal data parameter symbol ratings unit junction to ambient ja 110 c/w junction to case jc 1.8 c/w
utt60n06 power mosfet unisonic technologies co., ltd 3 of 8 www.unisonic.com.tw qw-r502-575.a ? electrical characteristics (t c = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0 v, i d = 250 a 60 v drain-source leakage current i dss v ds = 60 v, v gs = 0 v 1 a forward v gs = 20v, v ds = 0 v 100 na gate-source leakage current reverse i gss v gs = -20v, v ds = 0 v -100 na on characteristics gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs = 10 v, i d = 30 a 14 18 m ? dynamic characteristics input capacitance c iss 2000 pf output capacitance c oss 400 pf reverse transfer capacitance c rss v gs = 0v, v ds =25v, f = 1mhz 115 pf switching characteristics turn-on delay time t d(on) 12 30 ns rise time t r 11 30 ns turn-off delay time t d(off) 25 50 ns fall time t f v dd =48v, i d =60a, r l =0.5 ? , v gs =10v (note 1, 2) 15 30 ns total gate charge q g 39 60 nc gate-source charge q gs 12 nc gate-drain charge (miller charge) q gd v ds = 30v, v gs = 10 v i d = 60a (note 1, 2) 10 nc source-drain diode ratings and characteristics diode forward voltage v sd v gs = 0 v, i s = 60a 1.6 v continuous source current i s 60 pulsed source current i sm 120 a reverse recovery time t rr 60 ns reverse recovery charge q rr i s = 60a, v gs = 0 v, di f /dt = 100 a/ s (note 1) 3.4 c notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature.
utt60n06 power mosfet unisonic technologies co., ltd 4 of 8 www.unisonic.com.tw qw-r502-575.a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
utt60n06 power mosfet unisonic technologies co., ltd 5 of 8 www.unisonic.com.tw qw-r502-575.a ? test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
utt60n06 power mosfet unisonic technologies co., ltd 6 of 8 www.unisonic.com.tw qw-r502-575.a ? typical characteristics
utt60n06 power mosfet unisonic technologies co., ltd 7 of 8 www.unisonic.com.tw qw-r502-575.a ? typical characteristics(cont.) square wave pulse duration (sec) 10 -4 normalized thermal transient impedance 10 -5 0.1 0. 01 10 -3 10 -2 1 2 10 -1 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 13
utt60n06 power mosfet unisonic technologies co., ltd 8 of 8 www.unisonic.com.tw qw-r502-575.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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